发明名称 FORMATION OF DEPOSITION FOR BORON NITRIDE COATED FILM
摘要 PURPOSE:To obtain the titled hard BN coated film having excellent light transmissivity and tight adhesion by forming an electrodeless arc discharge region in a reaction vessel, introducing a gaseous mixture contg. boron hydride, nitrogen and hydrogen and depositing boron nitride on a substrate. CONSTITUTION:A substrate 2 is arranged in a reaction vessel 1 and a high-frequency coil 7 is arranged on the outer periphery to form in the vessel 1 an electrodeless arc discharge region 4 in an atmosphere at 800-1,600 deg.C. Then while the inside of the reaction vessel 1 is kept at 0.01-50Torr vacuum, the gaseous mixture of reactants consisting essentially of boron hydride, nitrogen and/or ammonia and hydrogen or the gaseous mixture of reactants consisting essentially of boron nitrohydride and hydrogen is introduced into the reaction vessel 1. The mixture of reactants is allowed to react in the discharge region 4, BN is deposited on the surface of the substrate 2 whose surface is heated at 500-1,300 deg.C and the desired BN coated film is obtained.
申请公布号 JPS61275198(A) 申请公布日期 1986.12.05
申请号 JP19850117344 申请日期 1985.05.30
申请人 MITSUBISHI METAL CORP 发明人 AKASHI KAZUO;YOSHIDA TOYONOBU;KOMATSU SHOJIRO
分类号 C23C14/06;C30B25/00;C30B25/10;C30B29/38 主分类号 C23C14/06
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