| 摘要 |
PURPOSE:To enhance the precision and reliability by providing a discharge chamber for generating a reaction exciting species at the introductory portion of an etching gas, thereby causing the etching to be performed at a high speed. CONSTITUTION:A microwave discharge chamber 15 is provided at the introductory portion of an etching gas, and the gas Cl2 supplied from the introductory port 16 of the etching gas is excited in the microwave discharge chamber 15, whereby a neutral reaction exciting species is introduced along with the gas Cl2 through a gas-introducing port 17 into a reaction chamber 11. On the other hand, the laser beam emitted from a light source 14 is projected vertically of a polycrystalline Si 12 as a specimen through a quartz window 13. Then, the gas Cl2 is optically dissociated to generate Cl atoms, and along with the Cl atoms the neutral reaction exciting species of the gas Cl2 generated in the microwave discharge chamber 15 performs the etching of the polycrystalline Si.
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