| 摘要 |
PURPOSE:To facilitate manufacture of an epitaxial structure for a P-type/N-type HEMT formation and form an excellent complementary HEMT with a high density by a method wherein a structure in which an epitaxial layer creating a P-type channel and an epitaxial layer creating an N-type channel are laminated is formed and the lower epitaxial layer is partially exposed. CONSTITUTION:An epitaxial structure for HEMT is employed in a P-type HEMT. In an N-type HEMT, an AlzGa1-zAs layer 6 is employed as an etching stopper layer and a recessed part is formed and the AlzGa1-zAs layer 6 is removed by wet etching to expose the N-type HEMT structure. A mixture gas of CCl2F2 and H6 is used for dry etching. A two-dimensional electron gas (N-type channel) layer C1 and a two-dimensional positive hole gas (P-type channel) layer are formed in I-type (non-doped) GaAs layers 2 and 7 which have larger electron affinity than the other layers at the boundaries of semiconductor layers 2 and 3 and semiconductor layers 8 and 7. P-type side ohmic electrodes 21 and 22 and N-type side ohmic electrode 11 and 12 are formed by lift-off and finished by alloy processing. Gate electrodes 13 and 23 of P-type side and N-type side can be formed simultaneously by one evaporation process by using, for instance, Al. |
