| 摘要 |
PURPOSE:To obtain a preferable ohmic contact due to the formation of a chromium silicide by forming a chromium electrode as the first layer electrode on an N type silicon substrate, and then heat-treating at 400 deg.C or higher. CONSTITUTION:A multilayer metal electrode which uses as the first layer chromium is formed on an N type silicon substrate, and heat-treated at 400 deg.C or higher. Thus, the contacting resistance of N type silicon and chromium is extremely reduced, and nonohmic contact can be converted into an ohmic contact. Accordingly, preferable ohmic contact is obtained, thereby improving VCE(sat) characteristic. |
