发明名称 |
Vertical MOS-FET devices having a planar multicell structure |
摘要 |
A vertical MOS-FET device having a planar multicell structure which is constituted by an assembly of elementary cells of a polygonal form having a source zone, a shortcircuit region, a channel zone and a drain zone. In the space between adjoining apices of a number of elementary cells there are provided complementary elements having a construction similar to that of the previously-mentioned cells but having a polygonal form adapted to the configuration of the cells. Thus, the overall length of the channel zones per unit surface area can be optimized.
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申请公布号 |
US4626880(A) |
申请公布日期 |
1986.12.02 |
申请号 |
US19830558234 |
申请日期 |
1983.12.05 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
NGUYEN MINH, CHAU;VERTONGEN, BERNARD |
分类号 |
H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L29/10 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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