发明名称 Semiconductor device for obtaining an accurate threshold voltage adjustment
摘要 The invention relates to an integrated MOS circuit comprising a MOS transistor which is connected as a resistor and which, when conducting current, generates a voltage which is supplied to the source/gate of a second field effect device. In order to obtain a suitable current adjustment, the two channel widths are chosen so that due to narrow channel effects, a difference (though small) in threshold voltage is obtained. The invention is of particular interest for CCD input circuits for generating a small offset voltage required for supplying FAT-zero.
申请公布号 US4627082(A) 申请公布日期 1986.12.02
申请号 US19840634923 申请日期 1984.07.26
申请人 U.S. PHILIPS CORPORATION 发明人 PELGROM, MARCELLINUS J. M.;HARWIG, HENDRIK A.;SLOTBOOM, JAN W.
分类号 H01L29/762;G05F3/24;H01L21/339;H01L27/088;H01L29/10;H01L29/76;H01L29/768;H01L29/772;(IPC1-7):G11C19/28;H01L29/78 主分类号 H01L29/762
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