发明名称 |
Semiconductor device for obtaining an accurate threshold voltage adjustment |
摘要 |
The invention relates to an integrated MOS circuit comprising a MOS transistor which is connected as a resistor and which, when conducting current, generates a voltage which is supplied to the source/gate of a second field effect device. In order to obtain a suitable current adjustment, the two channel widths are chosen so that due to narrow channel effects, a difference (though small) in threshold voltage is obtained. The invention is of particular interest for CCD input circuits for generating a small offset voltage required for supplying FAT-zero.
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申请公布号 |
US4627082(A) |
申请公布日期 |
1986.12.02 |
申请号 |
US19840634923 |
申请日期 |
1984.07.26 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
PELGROM, MARCELLINUS J. M.;HARWIG, HENDRIK A.;SLOTBOOM, JAN W. |
分类号 |
H01L29/762;G05F3/24;H01L21/339;H01L27/088;H01L29/10;H01L29/76;H01L29/768;H01L29/772;(IPC1-7):G11C19/28;H01L29/78 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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