发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To produce a highly reliable semiconductor device by a method wherein semiconductor elements are sealed with a composition composed of epoxy resin, terminal blocking body of polyimide with proper viscosity of 0.5 or less and novolak resin. CONSTITUTION:A semiconductor sealing epoxy resin with its melting point exceeding room temperature while getting solid or highly viscous at room temperature is utilized and cresol novolak is added thereto as a hardener. Moreover 3rd-class amine e.g. triethanol amine etc., 4th-class ammonium salt e.g. dodecyl trimethyl ammonium aiodide etc., imidasols e.g. dimethyl imidasol etc. and B compound e.g. tetraphenyl boron etc. are utilized as hardening accelerators. These resins are subject to proper viscosity of 0.5 or less and low molecular weight while the ends of chain molecule of polyimide structure are blocked with the primary amine coupling. Aniline is optimum for the 1st-class amine. Such a specific epoxy resin composition can be used for sealing semiconductor elements to produce the semiconductor device with excellent thermal resistance, moisture resistance and shock resistance.</p>
申请公布号 JPS61270854(A) 申请公布日期 1986.12.01
申请号 JP19850112872 申请日期 1985.05.24
申请人 NITTO ELECTRIC IND CO LTD 发明人 NAKAMURA YOSHINOBU;UENISHI SHINJIRO;TABATA HARUO
分类号 C08G59/00;C08G59/40;C08G59/50;C08G59/62;C08L63/00;H01L23/29;H01L23/31 主分类号 C08G59/00
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