| 摘要 |
PURPOSE:To contrive to enable to upgrade the conductive characteristics of the double-layer wiring structure of a semiconductor device by a method wherein, before the interlayer insulating film is formed, a conductor protrusion is previously disposed in upright on a connection part of the lower wiring film, where one end of the connection part of the upper and lower wiring films is to be provided, and successively, the interlayer insulating film and the upper wiring film are formed. CONSTITUTION:An SiO2 film 2 and a PSG film 7 are laminated on an Si substrate 1 to form a laminated material, an Al film 16 and an about 1,000Angstrom thick MOS film 17 are superposed on a substrate, which is the laminated material to constitute a lower wiring film 10, and an Al film 18 is formed on the lower wiring film 10. A masking 12 is performed using a resist, the Al film 18 is subjected to an etching using the MOS film 17 as a stopper and a protrusion 18a is formed. A masking is performed using a photosensitive polyimide 13, the lower wiring film 10 is etched in a prescribed pattern and after the mask 13 was removed, an interelement insulating film 14, such as an SiO2 film and so forth, is formed on the whole surface by a CVD method. The insulating film 14 is lifted off along with the resist film 12, the protrusion 18a, which is used as a connecting part, is made to expose on the same plane as the surface of the film 14, an upper wiring film 15 is formed and a double-layer wiring structure is completed. According to this constitution, even through the element is microscopically formed, the connection between the wirings is secured and no step disconnection generates in the upper wiring film. |
