| 摘要 |
PURPOSE:To selectively manufacture an SiO2 film by a method wherein an Al or Al compound mask is provided, reaction gas of a chemical compound and oxygen or a oxygen compound of 50cm/sec. or more is flowed, and a heat decomposition is generated at a low temperature. CONSTITUTION:A mask of Al vapor-deposited film 12 is provided on an Si substrate 11, the reaction gas containing the prescribed quantity of SiH4, O2 and N2 is introduced into a decompressed reaction chamber at the flow velocity of 50cm/sec. or above, and an SiO2 film 13 is grown. At this time, the SiO2 13 is not adhered on the Al film 12, it is grown on the substrate 11 only, and the surface of the substrate is flattened at a low heating temperature, thereby enabling to give no adverse effect on the characteristics of elements. |
