| 摘要 |
PURPOSE:To simplify a baking process by a method wherein the mask to be used for selective etching is provided on a semiconductor wafer, and when an IC and the like is brought into a microscopic state by etching, the IC is softened by the heat of projected ultraviolet rays using a positive type resist as a mask, thereby enabling to obtain the pattern having different cross-sectional forms. CONSTITUTION:The conductive film 12 such as the insulating film, consisting of SiO2 and the like or a metal is formed on the surface of an Si wafer 10, and the mask consisting of a positive type resist film 14 is provided on the conductive film 12 leaving the prescribed interval. Then, a baking process is performed by projecting ultraviolet rays UV on a part or all over the surface of said film 14, and at this time, if it is necessary to change the cross-sectional form of the film 14, the dosage of irradiation with the ultraviolet rays is changed to E1, E2 and the like and the rays are made to irradiate the films 14 which are devided into groups. Through these procedures, the softening temperature of the films 14 is brought down for every group, and the exposed part of the film 12 is removed by performing an etching using the film 14 as a mask. In other words, the shape of cross-section is changed by softening the film 14 as occasion demands, thereby enabling to unnecessitate the baking process to be performed independently. |
