| 摘要 |
PURPOSE:To measure the electrical conduction between diffusion layers after diffusion of an impurity and the depth of impurity diffusion by making the interval between part of adjacent windows opened plurally in a mask which prevents the diffusion of the impurity different. CONSTITUTION:A mask 1 which prevents the diffusion of an impurity is placed on the surface of a semiconductor substrate 2 and windows 3-7 for measuring the depth of the diffusion are opened linearly in the mask 1. The intervals a-d between the adjacent windows among the windows 3-7 are made different and are set in the order of a<b<c<d. Then, the impurity is added to the surface of the substrate 2 fromeach window 3-7 and impurity diffusion layers 8-12 are formed. The electrical conduction among the impurity diffusion layers 8-12 are measured in sequence, the conductive conditions between the impurity diffusion layers 8, 9; 9, 10;...11, 12 are confirmed and the depth of impurity diffusion is measured. |
