| 摘要 |
PURPOSE:To manufacture Ti ingot stably at a high yield without causing splash, by heat treating sponge Ti at a specified temp. range in vacuum, then electron beam melting it, when Ti ingot is produced by melting sponge Ti using electron beam. CONSTITUTION:Since MgCl2 and unreacted Mg are contained as impurities in sponge Ti produced by Mg reduction of TiCl4, Ti yield is decreased due to splash phenomenon caused by the impurities during casting high purity Ti ingot by melting sponge Ti using electron beam. In this case, sponge Ti is heated at 1,200 deg.C-Ti m.p. range in vacuum, MgCl2 and Mg are vaporized and removed, then melted by electron beam. High purity Ti ingot is produced without decreasing Ti yield due to splash phenomenon.
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