| 摘要 |
PURPOSE:To shorten the off time when the word line of a memory cell is not selected and to shorten the access time of a storage device by increasing transiently currents which flow through a word line in transition from selection to nonselection in response to a pulse signal from a current control circuit and the memory cell connected to the word line. CONSTITUTION:The current control circuit 2 detects only the time when a switching element 1 for word line selection turns off, i.e. when a word line is placed in an unselected state, and then outputs the specific pulse signal. A current source 3 flows transiently a discharging current to the memory cell 4 connected to the word line changing from a selected state to an unselected state in response to the pulse signal to lower the selection potential (high level of the memory 4 to a nonselection potential (low level) abruptly. |
