| 摘要 |
PURPOSE:To effectively crack a gaseous raw material and to form deposition at a high speed by providing plural capacity-coupled discharge electrodes in a reaction vessel, forming one thereof into a linear construction, disposing perpendicularly the electrodes in a discharge electric field and confining plasma therein. CONSTITUTION:The inside of the reaction vessel 11 of a plasma CVD device is evacuated by a pump 19 and the gaseous raw material contg. SiH4, etc., is fed therein from a gas feeder 18 to maintain the prescribed pressure in the vessel. A substrate 14 which is a rotary drum is then heated to and held at a prescribed temp. by a heater 15. At least the two electrodes 12, 13 constituting the discharge electrodes are electrically capacity-coupled and the high-frequency power from an oscillator 16 is impressed to one discharge electrode 12 thereof. The other electrode 13 is constructed as the coil-shaped linear electrode disposed perpendicularly to the discharge electrode field. DC or low-frequency electric power is impressed thereto from an oscillator 17 to induce the magnetic field in the direction intersecting with the discharge electric field. The electrons in the plasma generated by the high-frequency power are thereby confined and increased in the density, by which the gaseous raw material is cracked at a high utilizing rate and an a-Si film is formed at a high deposition rate.
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