| 摘要 |
PURPOSE:To improve the leakage of light due to the effect such as the multiple reflection and the like of the light which is made incident obliquely as well as to reduce the quantity of smear by a method wherein no electrode material such as polysilicon and the like is used on the part located under the edge of a light-shielding film, the insulating material such as an oxide film is used on the above-mentioned part, and the thickness of said insulating film is brought into the specific measurement or less. CONSTITUTION:The film thickness of an N-type region 15 and the thermally oxided film 100 located on the first polysilicon is set at 1,000Angstrom , and an aluminum light- shielding film 9 is formed on the thermally oxided film 100. An oxide protective film 19 of 5,000Angstrom thickness is formed as the top layer. The distance between a storage region and the N-type region 15 on the edge part of the light-shielding film 9 is 1,000Angstrom , no polysilicon electrode is present between the above-mentioned two regions, and an oxide film is present there. The light-shielding film 9 is formed in such a manner that is envelopes the polysilicon electrode and the thickly formed thermally oxided film 13 located on a channel stopper 6. When the distance between the edge part of the light-shielding film 9 and a silicon substrate 11 is set at (lambda/2n)Angstrom or above, the creeping of light can be prevented completely. |
