| 摘要 |
PURPOSE:To enable the series resistance of a collector to be lowered by a method wherein a groove is formed on the silicon substrate located under a collector electrode, an insulating film is formed on the side face of the groove, and the collector electrode and a buried layer are electrically connected through the intermediary of the structure wherein a conductor is embedded in the groove. CONSTITUTION:A groove reaching the internal part of a buried layer 12 is formed on the semiconductor substrate located under a collector electrode 19, a silicon oxide film 20 is formed on the side face of the groove, and tungsten 16 is embedded in the remaining part of the groove. The tungsten 16 is electrically connected to the buried layer 12 directly or through the intermediary of an N-type polycrystalline silicon 17. Collector current flows in the order of through an epitaxial layer 13, the buried layer 12, the tungsten 16, an N-type polycrystalline silicon 17 and the collector electrode 19. The resistance from the buried layer to the collector electrode 19 is lowered, and the withstand voltage between the base and the collector is not deteriorated, because they are insulated. |
