发明名称 SEMICONDUCTOR DEVICE AND SUBSTRATE FOR SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To provide a semiconductor device and a substrate in which preferably electric characteristics are provided even in low temperature environment and cracks are suppressed by mounting a heater operates at the prescribed temperature or lower by a switching element in a package and on the substrate. CONSTITUTION:A heater 7 is provided at the opposed position to a semiconductor chip 4 on the inner lower surface of a ceramic cover 2 in an inner space of a package, a switching element 8 for turning ON and OFF in response to temperature change is provided to connect the heater 7 with a power line at the prescribed temperature or lower, connected with outer leads for supplying power in a plurality of outer leads 5 by supply an external current to the heater 7. A substrate is formed of a plate 11 of an epoxy or polyimide, a printed circuit layer 12 is formed in a pattern on the upper surface of the plate 11, and the outer leads 13a of a semiconductor device 13 are bonded by a solder 14. A heater 15 of stainless steel foil is buried, for example, in the plate 11 by a laminating method, and the end is connected with a switching element 16 mounted on the plate 11.</p>
申请公布号 JPS61264744(A) 申请公布日期 1986.11.22
申请号 JP19850105666 申请日期 1985.05.17
申请人 TOSHIBA CORP 发明人 OTANI RYUICHI
分类号 H01L23/04;H01L23/14;H01L23/34;H05K1/02;H05K1/18 主分类号 H01L23/04
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