| 摘要 |
PURPOSE:To form a gate electrode having good sealability by depositing a WSix film which contains excess Si, a WSix film which contains less Si, and a WSix film which contains excess Si on a primary oxide film, and further annealing them. CONSTITUTION:The main surface of an Si substrate 1 is selectively oxidized to form a LOCOS oxide film 2. Then, a gate oxide film 3 is formed in a high temperature oxidative atmosphere. Thereafter, a WSi3.1 film 4 is deposited, a WSi2.6 film 5 is then deposited, and a WSi3.1 film 4 is further deposited. They are then annealed, patterned to dry-etch the WSix films, thereby forming electrodes. |
