| 摘要 |
PURPOSE:To disturb the arrival of an excess input charge of static electricity to an inner gate and to protect it by forming a reverse conductive type region to a substrate between an input/output terminal and the inner gate, and forming the same conductive type region as the substrate near the region. CONSTITUTION:A P<+> type region 10 is formed between a P<+> type region 2 connected directly with an input/output terminal and an aluminum wiring layer 4 to an inner gate in an N-type substrate 1, and an N<+> type diffused region 11 of the substrate potential is provided at the position opposed through an interval of approx. 8mum to the region 10. The region 11 is disposed at the periphery of a semiconductor chip, an aluminum wiring layer 12 is disposed on the region 11, and connected with a contacting window 14. The layer 4 is also formed on the region 10, connected with the region through a contacting window 13 so that the entire region 10 operates uniformly as a P<+>-N diode. |
