| 摘要 |
PURPOSE:To eliminate the disconnection of wires formed on the semiconductor device by coating an insulating film having an opening on a semiconductor substrate, growing a semiconductor layer on the entire surface, forming a polycrystalline layer on the insulating film, doping impurity on unnecessary portion, and then etching it to remove it, thereby obtaining a flat surface thereon. CONSTITUTION:An n<+> type buried region 3 and a p+ type channel breakdown region 4 surrounding the region 3 are formed in a p type Si substrate, and an SiO2 film 2 having an opening is coated on the region 3 thereon. Then, an n type layer is grown on the entire surface, monocrystalline layer 5a and polycrystalline layer 5b are formed respectively on the region 3 and the film 2, a p type impurity is diffused in the entire surface, and shallow and deep layers 51a and 51b are formed respectively in the layers 5a and 5b by utilizing the stepwise difference between the monocrystal and the polycrystal. Thereafter, it is heat treated to alter them into an oxide film 52 swelled in volume, and is etched and removed to obtain approximately flat layers 5a and 5b. Subsequently, the layer 5b is formed in desired shape, p type base region 7b or the like is formed thereon, and wire layer is formed on the entire surface thereof. |
