| 摘要 |
PURPOSE:The titled apparatus, having an inner crucible having a hole in the interior of a crucible and capable of producing a silicon single crystal having little variation in resistance value and oxygen concentration. CONSTITUTION:A silicon raw material and dopant are filled in a crucible 5, which decompressed while passing an inert gas thereinto. A current is then passed from electrodes 6 and 6 through a carbon heater 7 to melt the raw material in the crucible 5. A supporting axis 3 is lifted to dip the inner crucible 10 in molten silicon 14. A seed crystal 13 is then dipped in the molten silicon 14 in the inner crucible 10 in the state of the rotated crucible 5. The seed crystal 13 is then pulled up while rotating a pulling up axis 11 to grow the aimed silicon single crystal 15. As the pulling up proceeds, the supporting axis 3 is lifted to keep the positional relation between the melt surface of the molten silicon 14 and the inner crucible 10 constant. Thus, the use of the crucible having the double structure provides the production of the silicon single crystals having little variation in resistance value and oxygen concentration and further, the yield of silicon wafers can be improved.
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