DUPLICATE WIRING IN SEMICONDUCTOR DEVICE

摘要

The aluminium wiring of a semiconductor device is provided in two layers so that if a break occurs in one layer the other layer provides an alternative conduction path. As shown a first layer 20 of an aluminium wiring pattern is buried in a layer 19 of a phospho-silicate glass. A second layer 26 of the same aluminium wiring pattern is deposited on the glass with regularly spaced holes 24 through the glass coupling the two layers. The duplicate wiring is particularly effective against breaks caused by passivation cracks.