| 摘要 |
PURPOSE:To form an ultrafine pattern without decrease in the yield and the quality by placing a plurality of semiconductor substrates in which the front surfaces are directed downward in the holes of a plurality of upper electrodes in which the holes are slightly smaller than the substrates, and etching the surfaces of the substrates exposed with the lower surface of the electrodes, thereby etching without dropping and accumulating dusts on the surfaces of the substrates. CONSTITUTION:An etching chamber 1 is connected through an exhaust port 4 with a vacuum pump 5, and further has a gas inlet 6. A cathode 2 is connected with a high frequency power source 7, an anode 3 is placed in the holes 9 above the anode 3 with a plurality of semiconductor substrates 8 in which the front surfaces are directed downward, thereby etching the surfaces of the substrates 8 exposed with the lower surface of the anode 3. Thus, the substrates 8 can be etched with the front surfaces directed downward. |
