| 摘要 |
PURPOSE:To avoid a malfunction of a transistor and generation of a noise caused by a light signal and improve high frequency characteristics of a light signal amplifier by a method wherein a photodiode is formed on the same substrate as the substrate on which the transistor is formed and a light shielding film is formed above the substrate. CONSTITUTION:After the second layer insulation film 18 is formed over aluminum electrodes 17c-17e in an amplifier part, the second aluminum layer is evaporated and patterned to form an aluminum wiring 19 which provides signal lines and source lines. The third layer insulation film 22 is formed on the aluminum wiring 19 and, on the layer insulation film 22, the third aluminum layer 21 is formed covering only the part above an amplifier forming region A. Therefore, even if a photodiode is formed on the same substrate as the substrate of the amplifier, a light signal incident into the photodiode is shielded by the aluminum layer 21. With this constitution, a malfunction of a transistor and generation of a noise caused by the light signal can be avoided and high frequency characteristics of a light signal amplifier can be improved. |
