| 摘要 |
PURPOSE:To realize a highly reliable multilayered wiring by a method wherein a contact column made of a high melting point metal, a silicide of a high melting point metal or a nitride of a high melting point metal and a layer insulation film are formed and, after the head part of the contact column is exposed above the layer insulation film, the second wiring layer is formed. CONSTITUTION:A field oxide film 32, an Al film 33 and a tungsten film 34 which is to be a contact column are successively deposited on the surface of a P-type silicon substrate 31. Those layers are successively removed selectively by etching to form the first wiring layer 35 made of Al and a W pattern 36. Then a resist pattern 37 is formed on the part of the W pattern 37 where the contact column is to be formed and the exposed W pattern 36 is selectively removed by etching by using the resist pattern 37 as a mask. The resist pattern 37 is removed and the contact column 38 made of W is formed on the first wiring layer 35. After an SiO2 film on the head part of the contact column 38 is removed, the second layer Al film is evaporated over the whole surface to form the second wiring layer 40. With this constitution, a highly reliable multilayered wiring can be formed. |
