| 摘要 |
PURPOSE:To obtain an excellent compound semiconductor device having no defect and the like by a method wherein, after ions are implanted on a compound semiconductor layer, a heat treatment is performed in the prescribed atmosphere using the arsine of the prescribed atmosphere using the arsine of the prescribed partial pressure. CONSTITUTION:Zn is diffused by performing an ion implantation using an SiO2- Al2O3 double layer film as a mask for selective diffusion. The impurity diffused layer formed by said ion implantation finally reaches a layer 4 by performing a heat treatment. Then, another heat treatment is conducted for 30min in the atmosphere of 800 deg.C using hydrogen of 500cc/min as carrier gas and arsine AsH3 gas of 0.2cc/min. As the As in the compound semiconductor such as GaAs and the like is brought into almost equal status with the vapor pressure of the As of the arsine gas by the above-mentioned heat treatment, the As contained in GaAs is isolated or decomposed from a substrate 1 and each semiconductor layer, and the generation of empty holes can be suppressed. The arsine gas is in the best state when it is 1cc/min or less for hydrogen gas of 500cc/min. |
