| 摘要 |
PURPOSE:To obtain a Schottky bonding element, by utilizing the fact that the oxide polymer of an aniline compound is a P-type organic semiconductor having very stable electric characteristics in air, and depositing a specified metal layer. CONSTITUTION:The oxide polymer of an aniline compound is a substantially linear polymer, wherein a quinonedimine structure basically expressed by a formula in the Figure is a main repeating unit. When an electron acceptor as a dopant is included, conductivity is indicated. The dopant is not restricted if it is a proton supplying material. Halogen, sulfuric acid, methanol and the like are used. A macromolecular weight body is desirable for the polymer. It is suitable when the dopant has the weight of 0.5g/dl and 97% concentrated sulfuric acid solution has the logarithmic viscosity of 0.1-1.0 at 30 deg.C. When, one of Al, In and Ga is evaporated on the surface of the P-type organic halogen of such a polymer in a vacuum, the stable Schottky bonding element having excellent rectifying property is obtained. In detail, a P-type organic semiconductor 3 is provided on an Au electrode 2 on a glass substrate 1 so that a part of the semiconductor is exposed. A specified metal 4 is laminated on the surface, and a Pt leads 5 are attached thereto. |
