发明名称 CELL BUILT-IN TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To secure the stabilized operational characteristics and the increased input/output terminal effect by a method wherein a semiconductor chip is mounted on a thin film cell composing part. CONSTITUTION:Solid thin film cells 3 formed of top and bottom electrodes are fixed on diemount leads 4 in leadframes 5 and then a RAM semiconductor divice 2 is mounted on the cells 3 to form a memory semiconductor device. When a power supply terminal and a ground terminal of this semiconductor device are connected to each other through the cells 3, any fluctuations in power supply potential while RAM is driven are complemented by the cells 3 to stabilize the operation of RAM. Furthermore, the RAM with stabilized operation can be produced even if it is epoxy resin sealed with the same size as that of ordinary semiconductor package since the thin film cells are formed on the leadframes 5.
申请公布号 JPS61255033(A) 申请公布日期 1986.11.12
申请号 JP19850097110 申请日期 1985.05.08
申请人 NEC CORP 发明人 BONSHIHARA MANABU;TAKEGAWA KOICHI
分类号 H01L21/52;H01L21/58;H01L21/60 主分类号 H01L21/52
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