| 摘要 |
PURPOSE:To curb the lowering of mutual conductance and to improve the reliability of a MOS transistor by a method wherein a conductive layer for diffusing an injected charge into an insulating film near a gate electrode by a hot carrier effect is provided on a low impurity concentration layer. CONSTITUTION:A gate electrode 13 is formed of polycrystalline silicon on a p-type Si substrate 11 of a MOS transistor TR with a gate insulating film 12 interposed between them. This electrode 13 being used as a mask, n<-> type layers 14 and 15, which are low impurity concentration layers, are formed to be shallow by diffusion. Moreover, a silicon oxide film 19 left on the side wall of the electrode 13 being used as a mask, n<+> type layers 16 and 17 having a high impurity concentration are formed by diffusion, so as to construct source and drain regions of TR of an LDD structure. A conductive layer 18, which is a W layer, is provided continuously in an area expanding from the surface of the n<-> type layer 15 on the drain side over to the surface of the n<+> type layer 17. By this conductive layer 18, the lowering of mutual conductance is curbed and the reliability of TR is improved.
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