| 摘要 |
PURPOSE:To select a device with a provable deterioration by radiation, by measuring changes in the current amplification factor at a fine current area of a silicon bipolar transistor within a semiconductor device or characteristic standard of the device determined by the changes in the current amplification. CONSTITUTION:Some semiconductors made up of a silicon bipolar transistor or the like may be deteriorated by radiation in the use under a radiation environment. In the low dose irradiation, the current amplification factor at a small current area of the bipolar transistor changes greater than that at a large current area. So changes in the current amplification factor at the fine current area of the bipolar transistor or changes in the characteristic standard of the semiconductor device based on the changes in the current amplification factor are measured. This enables the selection and removal of the semiconductor with a provable deterioration by radiation from the measured data.
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