| 摘要 |
PURPOSE:To obtain a semiconductor device in which the capacity of a depletion layer is changed by the application of a pressure by adding a large amount of copper to silicon that contains phosphorus with a density of the order of 10<17>cm<-3>. CONSTITUTION:A silicon 1 constituting the semiconductor of a Schottky diode is formed as an 1mm thick wafer and contains phosphorus with a density of 1.7X10<17>cm<-3>. A schottky electrode 2 is formed by depositing a 1.5mm diameter gold on the mirror-finished surface of the silicon through a vacuum evaporation. An ohmic contact 3 on the reverse side of the silicon 1 is formed by depositing an aluminum electrode 4 through a vacuum evaporation after the sintering of gold-antimony. A locally concentrated stress is produced in the diode such that a pressure plate 6 is pressed against a stopping member 5 with a hemispherical projection while sandwiching the diode 1 there between. The I-V and C-V relationships of the diode is optically measured. The depletion layer capacity of the diode specimen is decreased and subjected to a frequency dispersion both due to the addition of copper, resulting in that a large amount of deep acceptor is introduced due to the same. |
