| 摘要 |
PURPOSE:To form the Schottky gate FET having the gate length of submicron level which is impossible by a photoprocess by a method wherein an opening of the width which is possible by a photoprocess is formed on the first insulating film forming on a semiconductor substrate and the second insulating film is deposited on the side plane of said opening to reduce a width of the opening and a Schottky gate is formed on the opening. CONSTITUTION:On the surface of a semi-insulating GaAs substrate 11, an N- channel layer 12 and an N<+> source region 13 and an N<+> drain region 14 are formed. The silicon dioxide (SiO2) film 102 as the first insulating film is formed and a gate forming opening 103 is formed by usual photolithography. Next, the second SiO2 film 104 is deposited which is then plane-etched to the uniform depth from the surface by an etching means comprising the anisotropy vertical to the substrate surface to expose the layer 12. A Ti film, a Pt film and an Au film are laminated on the substrate including the inside of the opening 103 by vapor deposition as usual and patterning is done so that a TiPtAu gate electrode 105 is formed.
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