| 摘要 |
PURPOSE:To uniformize the pattern configurations of the resists and the etching rate in the surface of a wafer and to obtain a high-precision etching with good reproducibility by a method wherein materials to consume an etchant, which is the species to contribute to the etching, are arranged on the periphery of the simple electrode, whereon the wafer is placed. CONSTITUTION:Etchant consuming materials 5 are arranged on the peripheral parts of a wafer 10 on a sample electrode 2. Hereby when an etching treatment is performed on the wafer 10, the feed rate of the etchant in the surface of the wafer 10 becomes constant by the working of the etchant consuming materials 5 and the uniformity of the etching rate in the surface increases. By this way, an etching can be faithfully performed on films 13 to be etched under resists 12 including both of the film 13 at the central part of the wafer 10 and the films 13 at the peripheral parts thereof to the pattern configurations of the resists 12. |
