| 摘要 |
PURPOSE:To provide a MESFET with a high barrier height, by diffusing doping material being contained in a high melting-point metal or cilicide film into the compound semiconductor layer surface by heat treatment in order to form a compound semiconductor layer. CONSTITUTION:In a semi-insulating GaAs substrate 1, an N-type GaAs channel region 2 is formed. After WSix film 3 is formed, P ions are implanted into the entire surface. The film 3 is patterned to form a Schottky gate electrode 3'. Next, an SiO2 film 4 is formed and an opening 4A is formed, Si ions are implanted through the opening 4A. After the SiO2 film 4 is removed, an AlN film 5 is formed. By applying a lamp annealing method, the heat treatment is done. Since P being contained in the gate electrode 3' is diffused extremely shallowly into the surface of the region 2, a thin GaAsP layer 6 with a wide band gap is formed, with the result that the barrier height phiB of the MESFET can be increased.
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