发明名称 |
AN APPARATUS FOR MEASURING CARRIER LIFETIMES IN A SEMICONDUCTOR |
摘要 |
A carrier lifetime measuring apparatus according to the present invention has a construction wherein a first photon beam of a wavelength capable of rendering the optical absorption coefficient of a semiconductor sample very small when the semiconductor sample having a potential barrier in the vicinity of its surface is irradiated with the radiation, and a second photon beam of a wavelength capable of rendering the optical absorption coefficient very large are respectively chopped to alternately irradiate the identical place of the semiconductor sample with the chopped beams; first and second photovoltages which are generated in the semiconductor sample by these photon beams are detected by capacitance coupling; and the ratio between a first amplitude variation and a second amplitude variation is obtained from the amplitudes of the detected photovoltages; thereby to evaluate a minority carrier lifetime in the semiconductor sample. |
申请公布号 |
DE3460840(D1) |
申请公布日期 |
1986.11.06 |
申请号 |
DE19843460840 |
申请日期 |
1984.02.01 |
申请人 |
HITACHI, LTD. |
发明人 |
NORIAKI, HONMA;CHUSUKE, MUNAKATA |
分类号 |
G01N21/00;G01R31/28;H01L21/66;(IPC1-7):G01R31/26 |
主分类号 |
G01N21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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