THIN LAYER FORMATION OF COMPOUND SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE:To realize etching with an excellent uniformity by a method wherein the main surface of a substrate other than the surface to be etched is protected from an etchant and an etching process is carried out while the substrate being inclined and rotated. CONSTITUTION:For instance, a GaAs semiconductor substrate 3 is stuck to a glass plate 2 and put on an etching jig 1 with 70 deg. inclination and stood in a beaker 4 and rotated with a speed of 0.1 turn per minute so as to let the side 6 come to the position of the side 7 in an etchant 5 whose composition is H2SO4:H2O2:H2O=1:8:4 and temperature is 40 deg.C. The main surface other than the surface to be etched is stuck to the glass plate 2 and protected. With this constitution, uniform etching can be realized.