| 摘要 |
<p>A photoelectric conversion device has a plurality of photoelectric conversion cells, each cell having a semiconductor transistor comprising two main electrode regions (15) (4,1,2) made of one conductive type semiconductor and a control electrode region (19) made of another conductive type semiconductor and a capacitor (14) (12) (9) for controlling the control electrode region at a floating state, the potential at the control electrode region at a floating state being controlled by means of the capacitor so that carriers generated by light are stored in the control electrode region and the output of each cell is controlled in accordance with the storage voltage generated by the storage. In such a photoelectric conversion device, an isolation region for electrically insulating adjacent photoelectric conversion cells includes an insulation region (24) and a semiconductor region (23) of high impurity density formed beneath the insulation region; and the semiconductor region of high impurity density is made of the same conductive type semiconductor as the main electrode regions.</p> |
