| 摘要 |
PURPOSE:To obtain a magnetoresistance element which has a small saturation magnetic field even if the stripe of a ferromagnetic resistor is narrow and has a high magnetic sensitivity is a low magnetic field by forming a ferromagnetic layer on the surface of an insulation layer except on the part corresponding to the resistor. CONSTITUTION:Ni-Fe, a magnetoresistance material, is evaporated on an insulating substrate 11 and a stripe shape magnetic resistor 12 with a stripe width W is left on the substrate 11 by etching the evaporated film. Al electrodes 13a and 13b are formed at both ends of the resistor 12 and SiO2 is applied over the whole surface of the substrate 11 by a sputtering method to form an insulation layer 14. Then, a ferromagnetic material such as Ni-Fe is evaporated on the insulation layer 14 in a vacuum. The part of the evaporated film on the resistor 13 is removed by etching with a margin of 1mum along the outside circumference of the resistor 12 to leave a ferromagnetic film 16. Then SiO2 is applied over the whole surface of the substrate 11 to form a protection film 17. The protection films 14 and 17 on the electrodes 13a and 13b are removed by etching to form electrode lead-out parts 15a and 15b. |
