ELECTROPHOTOGRAPHIC SENSITIVE BODY

摘要

PURPOSE:To improve the life of an electrophotographic sensitive body by using the intrinsic amorphous silicon and/or intrinsic amorphous silicon germanium contg. a slight amt. of a group IIIb element and group Vb element as a photoconductive layer of the photosensitive body. CONSTITUTION:This photosensitive body has the photoconductive layer consisting of the intrinsic amorphous silicon and/or intrinsic amorphous silicon germanium contg. <=10ppm group IIIb element and <=10ppm group Vb element. The density of states of the defects in the amorphous silicon increases and therefore a good photosensitive characteristic is not obtainable when the content of either of the group IIIb element or the group Vb element exceeds 10ppm. The effect of improving the fatigue phenomenon of the photosensitive body is low if the contents of the group IIIb element and the group Vb element are too low and therefore the contents thereof are respectively >=0.1ppm.