| 摘要 |
PURPOSE:To facilitate beam annealing by a method wherein a semiconductor pattern having an end expanded on an insulating film is formed in an opening of the insulating film, and annealing is conducted with a beam larger than the pattern so as to make the pattern be of single crystal and be a seed structure. CONSTITUTION:After a poly-Si film is formed repeatedly in an opening of an oxide film 2 on an Si substrate 1 and on the film 2, patterning is applied so that the end portion of said Si film be on the film 2, whereby a poly-Si film 4 is formed. Next, an Si oxide film 5 is formed on the surface of the film 4, and a poly-Si film 6 on the whole. Subsequently, the films 4 and 6 are annealed by a laser beam having a beam width 14 larger than the size of the film 4. On the occasion, the growth of crystals starts from the portion on the substrate 1 whereat temperature is low, and the film 4 turns to be single crystals having the same orientation of crystallization as the substrate 1. Then, the films 6 and 5 are removed, and a poly-Si film 8 and cap films 9 and 10 are provided. With the crystals 7 used as a seed, laser anneal scanning 11 is executed to crystallize the film 8. Since the area of the seed is large and the end thereof is apart from the opening, the optimum condition may be set only the semiconductor on the film 2 on annealing. |
