| 摘要 |
PURPOSE:To prevent the contamination of an electrode material from an electrode on the high-frequency power applying side to a material to be etched by bringing cathode voltage generated in the electrode to sputtering threshold voltage or lower peculiar to the electrode material required when the electrode material is sputtered. CONSTITUTION:A dry etching device consists of a vacuum vessel 8, an evacuation connecting port 9 connected to an evacuation means not shown, an etching gas supply piping 10, a low-pass filter, 11, a substrate electrode 12, an opposite electrode 13 and a high-frequency power supply 14. 15 represents a member to be etched. Cathode dropping voltage measured through the low-pass filter 11 mounted between the opposite electrode 13 and the power supply 14 is controlled by etching pressure, an etching gas, a distance between the electrodes, etc., and set to the intrinsic sputtering threshold or less of an electrode material, and the device is operated. |
