| 摘要 |
PURPOSE:When a p-type silicon carbide single crystal containing Al or the like as acceptor impurites is allowed to grow on a silicon single crystal base by the vapor-phase method, metallic Al and HCl gas as a carrier gas are employed to enable the practical application of the process. CONSTITUTION:A silicon single crystal base 4 is placed on the sample support 3 and heated up to 900-1,200 deg.C with the work coil to which high-frequency currency is applied. SiH4 and propane as feed gases and H2 as a carrier gas are fed to effect the growth of an extremly thin film of silicon carbide on the silicon base 4. Then, the feed gases are stopped feeding and the high-frequency current applied to the work coil 8 are increased to raise the temperature of the silicon base 4 up to 1,300-1,400 deg.C. Simultaneously, another high-frequency current is applied to work coil 9 to heat the Al plate 6 up to 200-600 deg.C. At this state, SiH3 and propane are introduced together with HCl gas as a carrier into the reactor tube 1 to effect the growth of a thin film of a p-type silicon carbide single crystal on the extremely thin film of silicon carbide coating the silicon base. |
