| 摘要 |
PURPOSE:To obtain the film of uniform thickness ranging over a wide area using a small-sized growing furnace by a method wherein a plurality of gas introducing portse are provided vertically crossing the direction of gas stream in a growth furnace in parallel with the surface of a substrate. CONSTITUTION:A substrate 11 is placed on the supporting stand 12 made of carbon. The crystal growth raw gas of the same constitution crosses a gas stream, and it is fed to a growth furnace 15 from the gas introducing pipes 14 having gas introducing ports 13 which are arranged in parallel with the surface of the substrate. When GaAs is going to be grown by performing an MOCVD, the hydrogen which is used as carrier gas is fed into the container 24 containing the triethyl gallium 23 which is kept warm in a constant temperature vessel 22 after the flow rate of said hydrogen is controlled by a mass-flow controller 21, and a bubbling is performed. Subsequently, the hydrogen gas containing triethyl gallium passed through the gas introducing pipe 14 and fed into the growth furnace 15 from the gas introducing ports 13. After a growth reaction is performed, the gas is exhausted to an exhaust system 29. |
