发明名称 RESIST COMPOSITION FOR FAR ULTRAVIOLET LITHOGRAPHY AND USE THEREOF
摘要 Positive deep ultra-violet photoresists which are base developable comprise base soluble polymers and as photosensitive solubilizing agents compounds of the formula <IMAGE> (Formula I) wherein: R4 is hydrogen or -C(O)R5 in which R5 is an alkoxy group having from 1 to about 20 carbon atoms; R6, R7, R8 and R9 may each be the same or different and be hydrogen or alkyl of from 1 to about 6 carbon atoms when R4 is -C(O)R5; or when R4 is either hydrogen or -C(O)R5, (a) one of either R6 or R7 and one of either R8 and R9 is hydrogen and the other of either R6 or R7 and the other of either R8 or R9 which is not hydrogen together form an alkylene group of from 1 to about 6 carbon atoms, or (b) one set of either R6 and R7 together or R8 and R9 together is a cycloalkyl group of from 4 to 8 carbon atoms and the other set of either R6 and R7 or R8 and R9 that is not cycloalkyl are each hydrogen.
申请公布号 JPS61240237(A) 申请公布日期 1986.10.25
申请号 JP19860085220 申请日期 1986.04.15
申请人 J T BAKER CHEM CO 发明人 JIYOOJI SHIYUWARUTSUKO
分类号 C08K5/29;C08K5/00;C08L33/00;C08L33/02;C08L101/00;C09D5/00;G03C1/492;G03C1/52;G03C1/72;G03C5/16;G03F7/004;G03F7/016;G03F7/022;G03F7/039;G03F7/20;H01L21/027 主分类号 C08K5/29
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