发明名称 SPUTTERING METHOD
摘要 PURPOSE:To obtain a high-quality magnetic recording medium with which bit errors arise hardly in the stage of recording and reproducing by removing the unnecessary deposit on a substrate by an ion shower in the stage of depositing target components on the substrate by a magnetron sputtering method. CONSTITUTION:An Al substrate 23 is provided on an installing base 22 of a hermetic vessel 21 and an Fe target 26 is provided via a shutter 25 so as to face the substrate. The inside of a vessel 21 and the inside of a vessel 28 of an ion source 24 in the vessel 21 are thereupon evacuated to a vacuum respectively via valves 27, 29. A gas composed of a prescribed ratio each of Ar and O2 for sputtering and gas such as Ar are introduced respectively under the prescribed pressure and the high-pressure state higher than said pressure in the vessels 21, 28 through introducing pipes 31, 32. While the substrate 23 is rotated by a motor 33, the high voltage is impressed between the base 22 and the target 26. The gaseous Ar introduced into the vessel 28 is made into plasma by the high voltage impressed between the electrodes 34, 35 of the ion source 24 and the ions therein are led to the outside of the vessel 28 by an electrode 36 so as to collide against the magnetic recording medium on the substrate 23.
申请公布号 JPS61238959(A) 申请公布日期 1986.10.24
申请号 JP19850082029 申请日期 1985.04.16
申请人 FUJITSU LTD 发明人 KANDA HIDEKAZU;SHINOHARA MASAKI;KIUCHI KATSUMI;NAKAGAWA KATSUHIKO
分类号 C23C14/36;C23C14/34;C23C14/35;G11B5/85;G11B5/851 主分类号 C23C14/36
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