| 摘要 |
<p>An improved input network for MOS semiconductor devices intended to increase the device resistance to electrostatic discharge in the input circuit. A series of features comprising round and concentric round contacts (24) and buried contacts (16), a layer of polycrystalline silicon (18) disposed between the metal input contact (28) and the N+ diffusion layer (10A) and enlarged metal contact areas (16) are employed to reduce the tendency toward breakdown by reducing hot spots in the device.</p> |
