| 摘要 |
PURPOSE:To form a resist pattern high in resolution and contrast in a short time in order to obtain a superior highly integrated circuit and the like by forming a polymethyl methacrylate film as a resist film on the substrate to be processed, and using a developing soln. contg. ethyl cellosolve. CONSTITUTION:The substrate to be processed, such as a monocrystalline silicon substrate, is coated with a positive type resist of polymethyl methacrylate in a thickness of about 1mum, and baked in an atm. of N2, patternwise exposed by the electron beam patterning process, and processed with a developing soln. contg. ethyl cellosolve at about 25 deg.C for about 20min to dissolve off the exposed parts, thus permitting the resist pattern high in resolution and contrast to be obtained by using a good solvent of polymethyl methacrylate. |
