发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To reduce power consumption and to shorten an access time by connecting a switching FET which operates complementally to a level detecting FET in distant part of a selection line. CONSTITUTION:An auxiliary drive circuit WD1' etc. is provided at the distant part of a word line W1 etc. of the selection line. When a timing clock goes to H, an N-channel Q5 for switching connected to an N-channel FETQ4 for level-detection of the circuit WD1 which operates complementally, turns off while a P-channel Q6 turns on. When the level at the end of a line W1 reaches a threshold level, the Q4 turns on, and together with the Q5 draws the gate potential of a P-channel Q7 and makes it turn-on, accordingly, the line W1 is charged up by a power source potential VCC at the distant part, and the potential of the said line swiftly rises to go to selecting state. The non-selection by discharging is executed similarly; no DC current flows through the FET for level detection according to the switching FET that operates complementally. As a result, the power consumption decreases. Additionally, because the charge/ discharge is executed at the distant part, the access tie becomes shorter.
申请公布号 JPS61237292(A) 申请公布日期 1986.10.22
申请号 JP19850078364 申请日期 1985.04.15
申请人 HITACHI MICRO COMPUT ENG LTD;HITACHI LTD 发明人 SHINAGAWA YUTAKA;SHIMADA SHIGERU
分类号 G11C17/12;G11C8/08;G11C11/407;G11C17/18 主分类号 G11C17/12
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