发明名称 PREPARATION OF STARTING MATERIAL FOR GROWING SINGLE CRYSTAL
摘要 PURPOSE:To prepare a single crystal contg. no defect, particularly, no foam by using specified alumina as a starting material for melt, wherein said specified alumina is prepd. by hydrolyzing aluminium alkoxide by the sol-gel method at specified temp. range and heat-treating obtd. hydrolyzate at high temp. CONSTITUTION:Specified alumina used as a starting material for melt for the growth of a single crystal is prepd. by hydrolyzing aluminium alkoxide by the sol-gel method using HCl at 30-70 deg.C to obtain boehmite as hydrolyzate, and heat-treating the boehmite at high temp. in the air to transform to the specified alumina.
申请公布号 JPS61236696(A) 申请公布日期 1986.10.21
申请号 JP19850077775 申请日期 1985.04.12
申请人 SEIKO EPSON CORP 发明人 KUNUGI MASANAO
分类号 C30B29/20;C01F7/36 主分类号 C30B29/20
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