发明名称 RESIN-MOLDED SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent effectively the deterioration in the characteristics of the title device, which is generated by intrusion of water content into the sealing layer, and to improve the reliability by a method wherein a surface treatment is performed in advance on the filler using a coupling agent, the filler is mixed into an epoxy resin and a sealing layer is provided. CONSTITUTION:The subassemblies, whereon a surface stabilizing layer 6 is provided, are held in such a way that both electrodes 4 are kept in nearly a horizontal state and the prescribed amount of an epoxy resin is dripped on the subassemblies being made to rotate. A filler already performed a surface treatment is mixed into this epoxy resin in advance. The way to perform the surface treatment on the filler using a silane coupling agent is performed by moistening the powder of the filler with the fluid of the silane coupling agent before the filler is blended into the epoxy resin. By the rotation, the epoxy resin is wound on the subassemblies in a circular form. While the subassemblies are made to rotate, the surface part only of the epoxy resin is heated, for example, and is made to cure. Lastly, when the interior of the epoxy resin is made to cure by heating, for example, the resin-molded diode having a sealing layer 7 is obtained.
申请公布号 JPS61236142(A) 申请公布日期 1986.10.21
申请号 JP19850078099 申请日期 1985.04.12
申请人 HITACHI LTD;HITACHI HARAMACHI SEMICONDUCTOR LTD 发明人 SUDO KATSUHIKO;HIDAKA TOSHIYUKI;KAMIJO HITOSHI
分类号 H01L23/48;H01L23/29;H01L23/31 主分类号 H01L23/48
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